Altuntas, İsmailKoçak, Merve NurYolcu, GamzeBudak, Hasan FeyziKasapoğlu, A. EmreHoroz, SabitGür, EmreDemir, İlkay2022-05-122022-05-1202.02.2021Altuntas, I., Kocak, M. N., Yolcu, G., Budak, H. F., Kasapoğlu, A. E., Horoz, S., ... & Demir, I. (2021). Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111). Materials Science in Semiconductor Processing, 127, 105733.https://hdl.handle.net/20.500.12418/12871at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray diffraction) analyses showed that the highest growth temperature results with the lowest full width at half maximum (FWHM) value for both ɷ scans. Scanning electron microscope (SEM) and atomic force microscopy (AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth mode with openings while increased growth temperature resulted in change the growth mode to a columnar mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in AlN epilayers.eninfo:eu-repo/semantics/openAccessPALE, AlN, Epitaxial growth, MOVPEArticle2-s2.0-85100259040N/AWOS:000633206500002Q2