Ungan, FatihYesilgul, UnalSakiroglu, SerpilKasapoglu, EsinErol, AyseArikan, Mehmet CetinSari, HuseyinSokmen, Ismail2019-07-272019-07-282019-07-272019-07-2820121556-276Xhttps://dx.doi.org/10.1186/1556-276X-7-606https://hdl.handle.net/20.500.12418/8981Within the envelope function approach and the effective-mass approximation, we have investigated theoretically the effect of an intense, high-frequency laser field on the bound states in a Ga (x) In1 - x N (y) As1 - y /GaAs double quantum well for different nitrogen and indium mole concentrations. The laser-dressed potential, bound states, and squared wave functions related to these bound states in Ga1 - x In (x) N (y) As1 - y /GaAs double quantum well are investigated as a function of the position and laser-dressing parameter. Our numerical results show that both intense laser field and nitrogen (indium) incorporation into the GaInNAs have strong influences on carrier localization.en10.1186/1556-276X-7-606info:eu-repo/semantics/openAccessDouble quantum wellIntense laser fieldDilute nitrideReview7231139592-s2.0-84871012446Q1WOS:000312087300001Q1