Yesilgul, UnalUngan, FatihSakiroglu, SerpilDuque, CarlosMora-Ramos, MiguelKasapoglu, EsinSari, HuseyinSokmen, Ismail2019-07-272019-07-282019-07-272019-07-2820121556-276Xhttps://dx.doi.org/10.1186/1556-276X-7-586https://hdl.handle.net/20.500.12418/8983Using a variational approach, we have investigated the effects of the magnetic field, the impurity position, and the nitrogen and indium concentrations on impurity binding energy in a Ga1-x In (x) N (y) As1-y /GaAs quantum well. Our calculations have revealed the dependence of impurity binding on the applied magnetic field, the impurity position, and the nitrogen and indium concentrations.en10.1186/1556-276X-7-586info:eu-repo/semantics/openAccessImpuritiesQuantum wellDilute nitrideThe effect of magnetic field on the impurity binding energy of shallow donor impurities in a Ga1-xInxNyAs1-y/GaAs quantum wellReview723095253WOS:000312586300001Q1