Alejandro Vinasco, JuanAlejandro Londono, MauricioLeon Restrepo, RicardoEduardo Mora-Ramos, MiguelFeddi, El MustaphaRadu, AdrianKasapoglu, EsinLuis Morales, AlvaroAlberto Duque, Carlos2019-07-272019-07-282019-07-272019-07-2820180370-19721521-3951https://dx.doi.org/10.1002/pssb.201700470https://hdl.handle.net/20.500.12418/632712th International Conference on Optics of Surfaces and Interfaces (OSI) -- JUN 25-30, 2017 -- Trin Coll Dublin, Sch Phys, Dublin, IRELANDThe electron states in a holey elliptically shaped GaAs quantum dot are investigated within the effective mass scheme with the use of the adiabatic approximation and the finite element method. The effects of a donor impurity center and an applied electric field are particularly taken into account. Electron-impurity energies are reported as functions of both the geometry of the quantum dot and the applied field intensity, whereas temperature effects are also included. The analysis of electron-impurity intersubband transitions allows the investigation of the light absorption response of the system.en10.1002/pssb.201700470info:eu-repo/semantics/closedAccessbinding energydonor impurityellipsoidal quantum dotfinite element methodGaAsArticle25542-s2.0-85034655176Q3WOS:000430113000017Q3