Öztürk, Emine2024-10-262024-10-2620021300-01011303-6122https://search.trdizin.gov.tr/tr/yayin/detay/32746https://hdl.handle.net/20.500.12418/25331We investigated theoretically the change of electronic properties of Si $\\delta$-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration.eninfo:eu-repo/semantics/openAccessFizikUygulamalıOther26647146532746