Kasapoglu, E.Yesilgul, U.Ungan, F.Sokmen, I.Sari, H.2019-07-272019-07-282019-07-272019-07-2820180925-34671873-1252https://dx.doi.org/10.1016/j.optmat.2018.02.036https://hdl.handle.net/20.500.12418/6228en10.1016/j.optmat.2018.02.036info:eu-repo/semantics/closedAccessThe effect of the intense laser field on the electronic states I and optical properties of n-type double delta-doped GaAs quantum wells (vol 64, pg 82, 2017)Other811401402-s2.0-85042622304Q1WOS:000438324400021Q2