Demir, IlkayAltuntas, IsmailBulut, BarisEzzedini, MaherErgun, YukselElagoz, Sezai2019-07-272019-07-282019-07-272019-07-2820180268-12421361-6641https://dx.doi.org/10.1088/1361-6641/aab9d3https://hdl.handle.net/20.500.12418/6299We present growth and characterization studies of highly n-doped InGaAs epilayers on InP substrate by metal organic vapor phase epitaxy to use as an n-contact layer in quantum cascade laser applications. We have introduced quasi two-dimensional electrons between 10 s pulsed growth n-doped InGaAs epilayers to improve both carrier concentration and mobility of structure by applying pulsed growth and doping methods towards increasing the Si dopant concentration in InGaAs. Additionally, the V/III ratio optimization under fixed group III source flow has been investigated with this new method to understand the effects on both crystalline quality and electrical properties of n-InGaAs epilayers. Finally, we have obtained high crystalline quality of n-InGaAs epilayers grown by 10 s pulsed as a contact layer with 2.8 x 10(19) cm(-3) carrier concentration and 1530 cm(2) V-1 s(-1) mobility.en10.1088/1361-6641/aab9d3info:eu-repo/semantics/closedAccessInGaAsMOVPEV/III ratiocarrier concentrationArticle3352-s2.0-85046695705Q2WOS:000430193000001Q2