Altuntas, İsmailElagöz, Sezai2024-10-262024-10-2620212587-1943https://doi.org/10.46460/ijiea.898795https://search.trdizin.gov.tr/tr/yayin/detay/526929https://hdl.handle.net/20.500.12418/24783Effect of different nucleation layer temperatures (LT-GaN growth temperature) on the properties of the subsequent GaN epilayer grown by MOVPE is investigated. In-situ reflectance curves demonstrate that higher LT-GaN growth temperatures cause fast coalescence (shorter transition time) of GaN nucleation islands. Both photoluminescence (PL) and high-resolution x-ray diffraction (HRXRD) are used to demonstrate the influence of LT-GaN growth temperature on optical and structural properties of subsequent GaN epilayer, respectively. It is observed that the change of LT-GaN growth temperature has an effect on both full-width at half-maximum (FWHM) values obtained from the results of HRXRD measurement and yellow luminescence peak intensity. It is seen that the yellow luminescence peak intensities for samples alter with LT-GaN growth temperature.en10.46460/ijiea.898795info:eu-repo/semantics/openAccessCharacterizationGallium nitrideEpitaxyMetal organic vapor phase epitaxyArticle51106526929