Demir, IlkayElagoz, Sezai2019-07-272019-07-282019-07-272019-07-2820162147-1762https://hdl.handle.net/20.500.12418/7484In this study, we report the growth studies of InGaAs/InAlAs superlattices (SLs) with thin layer thicknesses which will be used for quantum cascade laser (QCL) structures, grown by Metal Organic Chemical Vapor Deposition (MOCVD) technique. We utilize high resolution X-ray diffraction (HRXRD) to determine the single layer thickness and period thicknesses of SLs. Measurement results show that by establishing very low growth rates (similar to 0,1 nm/s), the single thin layers and SLs can be grown well by MOCVD in a controllable and repeatable way with high crystalline and interface quality.eninfo:eu-repo/semantics/closedAccessSuperlatticeInGaAsInAlAsMOCVDX-ray diffractionArticle2949519472-s2.0-85006823107Q3WOS:000393128900024N/A