Browsing by Author "Sokmen, I"
Now showing items 21-40 of 68
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The electric field dependence of a donor impurity in graded GaAs quantum wires
Kasapoglu, E; Sari, H; Sokmen, I (SPRINGER HEIDELBERG, 2004)The effect of the electric field on the binding energy of the ground state of a shallow donor impurity in a graded GaAs quantum-well wire (GQWW) was investigated. The electric field was applied parallel to the symmetry ... -
Electric field dependence of the excitonic properties in graded double quantum wells
A quasi-bound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electron-hole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ... -
The electric field effects on intersubband optical absorption of Si delta-doped GaAs layer
The intersubband transitions in Si delta-doped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ... -
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
The analytical solution of the Schrodinger equation for a multiple-quantum-well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ... -
Electronic properties of Si delta-doped GaAs under an applied electric field
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ... -
Electronic properties of two coupled Si delta-doped GaAs structures
We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ... -
The electronic structure of a quantum well under an applied electric field
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined ... -
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ... -
Electronic subband of single Si delta-doped GaAs structures
We have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and ... -
Exciton absorption in quantum-well wires under the electric field
Kasapoglu, E; Sari, H; Bursal, M; Sokmen, I (ELSEVIER SCIENCE BV, 2003)The binding energy of excitons, and interband optical absorption in quantum-well wires of GaAs surrounded by Ga1-xAlxAs is calculated in effective-mass approximation, using a variational approach. Results obtained show ... -
Excitonic structure in a quantum well under the tilted magnetic field
Kasapoglu, E; Sari, H; Sokmen, I (AMER INST PHYSICS, 2000)By using an appropriate coordinate transform we have calculated variationally the ground state exciton binding energy in the single square well under the tilted magnetic field. The dependence of the binding energy to the ... -
Geometrical effects on shallow donor impurities in quantum wires
Kasapoglu, E; Sari, H; Sokmen, I (ELSEVIER SCIENCE BV, 2003)We have studied theoretically the impurity binding energy for wires of different shapes (V-shaped quantum wire (V-QWR) and rectangular wire) with a variational procedure without using any coordinate transformation. The ... -
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
Kasapoglu, E; Sari, H; Sokmen, I (ELSEVIER SCIENCE BV, 2002)The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ... -
Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field
Kasapoglu, E; Sari, H; Ergun, Y; Sokmen, I (ACADEMIC PRESS LTD, 1999)The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/Ga1-xAlxAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a ... -
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ... -
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ... -
Intense field effects on shallow donor impurities in graded quantum wells
Sari, H; Kasapoglu, E; Sokmen, I; Balkan, N (IOP PUBLISHING LTD, 2003)Using a variational method and within the effective mass approximation, we calculate the laser-field dependence of binding energy and the polarizability of shallow-donor impurities in graded quantum wells under an external ... -
Intense laser-induced electronic and optical properties in double finite oscillator potential
Sari, H.; Ungan, F.; Kasapoglu, E.; Sakiroglu, S.; Sokmen, I (TAYLOR & FRANCIS LTD, not define)In the present paper, a theoretically study of the non-resonant laser field effect on the optical response, such as nonlinear optical rectification (NOR), second (SHG) and third harmonic generation (THG) coefficients in ... -
Intersubband electron transition across a staircase potential containing quantum wells: light emission
We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ... -
Intersubband optical absorption in a quantum well under a tilted magnetic field
Kasapoglu, E; Sari, H; Sokmen, I (ACADEMIC PRESS LTD, 2001)By using an appropriate coordinate transform we have calculated the intersubband optical absorption in the single square well under a tilted magnetic field. In this study the dependence of the intersubband transitions on ...