Browsing by Author "İlkay Demir"
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Determination of Optical Properties of MOVPE‑Grown InxGa1‑xAs/ InP Epitaxial Structures by Spectroscopic Ellipsometry
Emine Kaynar; Muhammed Sayraç; İsmail Altuntaş; İlkay Demir (24.08.2022)InxGa1−xAs epitaxial layers with different AsH3 flows have been grown on InP substrate with the MOVPE system. It has been found that AsH3 flow variation affects the In concentration of InGaAs/InP structure because the ... -
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
Kağan Murat Pürlü; Merve Nur Koçak; Gamze Yolcu; İzel Pertikel; İsmail Altuntaş; İlkay Demir (16.01.2022)teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
Merve Nur Koçak; Kağan Murat Pürlü; İzel Pertikel; İsmail Altuntaş; İlkay Demir (26.06.2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
Merve Nur Koçak; Gamze Yolcu; Sabit Horoz; İsmail Altuntaş; İlkay Demir (3.09.2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
İzel Pertikel; Reyhan kekül; İsmail Altuntaş; Emre Gür; İlkay Demir (27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Ingaas Gunn Diyodu Tabanlı Isık Yayan Aygıtlar
Ayşe Erol; İlkay Demir (01.08.2020)Ingaas Gunn Diyodu Tabanlı Isık Yayan Aygıtlar -
Optical and nano-mechanical characterization of c-axis oriented AlN film
Padmalochan Panda; Ramaseshan Rajagopalan; S. Tripursundari; İsmail Altuntaş; İlkay Demir (19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
Smiri Badreddine; R.S. Joshya; İlkay Demir; Saidi Faouzi; İsmail Altuntaş; Delphine Lagarde; Cedric Rober; Marie Xavier; Maaref Hassen (10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
Gamze Yolcu; İrem Şimşek; Reyhan kekül; İsmail Altuntaş; Sabit Horoz; İlkay Demir (3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
Marwa Ben Arbia; Smiri Badreddine; İlkay Demir; Faouzi Saidi; İsmail Altuntaş; Fredj Hassen; Hassen Maaref (5.01.2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for ...
