Browsing by Author "Ergun, Y"
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An alternative method for the exact calculation of WannierStark localization in superlattices
We present an alternative method for the exact calculations of the WannierStark (WS) localization in a long periodic potential corresponding to a (50 Angstrom /30 Angstrom) GaAs/Ga0.7Al0.3As superlattice. We show that the ... 
Binding energies of excitons in symmetric and asymmetric quantum wells in a magnetic field
Kasapoglu, E; Sari, H; Ergun, Y; Elagoz, S; Sokmen, I (ACADEMIC PRESS LTD, 1998)The binding energy of the exciton in the symmetric and asymmetric GaAs/Ga1xAlxAs quantum wells is calculated with the use of a variational approach. Results have been obtained as a function of the potential symmetry, and ... 
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
Kasapoglu, E; Sari, H; Balkan, N; Sokmen, I; Ergun, Y (IOP PUBLISHING LTD, 2000)The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ... 
Double quantum well electronic energy spectrum within a tilted magnetic field
The analytical solutions of the Schrodinger equation for a double quantum well structure (DQWS) subjected to an externally applied tilted magnetic field are obtained and the results are discussed. The dependency of the ... 
The effect of the donor distribution on the electronic structure of two coupled Si deltadoped layers in GaAs
We have theoretically investigated the electronic structure of two coupled Si deltadoped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ... 
Electric field dependence of the excitonic properties in graded double quantum wells
A quasibound state approximation is used to obtain the electric field dependence of the eigenvalues, eigenfunctions, electronhole overlap integrals and excitonic binding energies for coupled, graded double quantum wells ... 
Electronic energy spectra in a multiple quantum well within external electric and tilted magnetic fields
The analytical solution of the Schrodinger equation for a multiplequantumwell system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained ... 
Electronic properties of Si deltadoped GaAs under an applied electric field
We have theoretically investigated the electronic structure of Si delta doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ... 
Electronic properties of two coupled Si deltadoped GaAs structures
We have theoretically investigated the subband structure of two coupled Si deltadoped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ... 
The electronic structure of a quantum well under an applied electric field
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasibound state is examined ... 
Electronic structure of two coupled Si deltadoped GaAs as dependent on the donor thickness
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si deltadoped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ... 
Electronic subband of single Si deltadoped GaAs structures
We have theoretically investigated the subband structure of single Si deltadoped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the deltadoping concentration, the deltalayer thickness and ... 
Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field
Kasapoglu, E; Sari, H; Ergun, Y; Sokmen, I (ACADEMIC PRESS LTD, 1999)The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/Ga1xAlxAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a ... 
Influence of an applied electric field on the electronic properties of Si deltadoped GaAs
We have theoretically studied the electronic structure of Si deltadoped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ... 
Influence of temperature on the electronic properties of Si deltadoped GaAs structures
We have investigated theoretically the electronic structure of Si deltadoped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ... 
Intersubband electron transition across a staircase potential containing quantum wells: light emission
We present a theoretical investigation of a novel staircaselike light emitter based on the GaAs/GaxAl1xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ... 
A new approach to quantum well infrared photodetectors: Staircaselike quantum well and barriers
We present a theoretical investigation of a novel staircaselike quantum well infrared photodetector (QWIP). The proposed structure makes use of quantum wells and barriers with increasing Al content both in the wells and ... 
The orbit centre dependence of the energy levels in a single quantum well under external titled magnetic and electric fields
Ergun, Y; Sokmen, I; Sari, H; Elagoz, S; Arikan, MC (IOP PUBLISHING LTD, 1997)The: analytical solutions of the Schrodinger equation for a square well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and the ... 
The selfconsistent calculation of Si deltadoped GaAs structures
In this study, we report results of a selfconsistent calculation obtained for the subband structure of Si delta doped GaAs material by using a new alternative method. We will discuss the influence of the delta doping ... 
Si deltadoped GaAs structure with different dopant distribution models
We have theoretically investigated the diffusion of donor impurities of single Si deltadoped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...