Browsing by Author "Ozturk, E"
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The dependence of the intersubband transitions in square and graded QWs on intense laser fields
The intersubband absorption in square and graded quantum wells under a laser field is calculated within the framework of the effective mass approximation. We conclude that, for quantum wells with different shapes, the laser ... 
The effect of the donor distribution on the electronic structure of two coupled Si deltadoped layers in GaAs
We have theoretically investigated the electronic structure of two coupled Si deltadoped GaAs at T = 0 K. For the uniform donor distribution we have studied the influence of donor concentration on the subband structure. ... 
Electric field and intense laser field effects on the intersubband optical absorption in a graded quantum well
The laser field dependence of the intersubband optical absorption in a graded quantum well (GQW), under an applied electric field is calculated in the effective mass approximation. We have theoretically shown that, in the ... 
The electric field effects on intersubband optical absorption of Si deltadoped GaAs layer
The intersubband transitions in Si deltadoped GaAs structures is theoretically investigated for different applied electric fields. For an uniform distribution the electronic structure has been calculated by solving the ... 
Electronic properties of Si deltadoped GaAs under an applied electric field
We have theoretically investigated the electronic structure of Si delta doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ... 
Electronic properties of two coupled Si deltadoped GaAs structures
We have theoretically investigated the subband structure of two coupled Si deltadoped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ... 
Electronic structure of two coupled Si deltadoped GaAs as dependent on the donor thickness
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si deltadoped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ... 
Electronic subband of single Si deltadoped GaAs structures
We have theoretically investigated the subband structure of single Si deltadoped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the deltadoping concentration, the deltalayer thickness and ... 
Influence of an applied electric field on the electronic properties of Si deltadoped GaAs
We have theoretically studied the electronic structure of Si deltadoped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ... 
Influence of temperature on the electronic properties of Si deltadoped GaAs structures
We have investigated theoretically the electronic structure of Si deltadoped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ... 
Intersubband optical absorption in quantum wells under applied electric and intense laser fields
Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained ... 
Intersubband optical absorption in Si deltadoped GaAs for the donor distribution and thickness as dependent on the applied electric field
We have theoretically investigated the intersubband transition for different doping concentrations and thickness in Si deltadoped GaAs with an applied electric field. The electronic properties such as the deltapotential ... 
Intersubband optical absorption of double Si deltadoped GaAs layers
For different applied electric fields the intersubband transitions of double Si deltadoped GaAs structures are theoretically investigated for a uniform donor distribution. The electronic structure has been calculated by ... 
Intersubband transitions for single, double and triple Si deltadoped GaAs layers
The intersubband transitions in single, double and triple Si deltadoped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ... 
Intersubband transitions in quantum wells under intense laser field
An intense laser field effect on the intersubband transitions in quantum wells is theoretically investigated within the framework of the effectivemass approximation. Results obtained show that intersubbband optical ... 
Intersubband transitions of Si deltadoped GaAs layer for different donor distribution models
For different donor distribution types we theoretically investigate the intersubband transitions of single Si deltadoped GaAs structure as dependent on the applied electric held. The diffusion of donor impurities is taken ... 
The selfconsistent calculation of Si deltadoped GaAs structures
In this study, we report results of a selfconsistent calculation obtained for the subband structure of Si delta doped GaAs material by using a new alternative method. We will discuss the influence of the delta doping ... 
Si deltadoped GaAs structure with different dopant distribution models
We have theoretically investigated the diffusion of donor impurities of single Si deltadoped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ... 
Subband structure and band bending in symmetric modulationdoped double quantum wells
We have calculated the subband structure and confinement potential of modulationdoped Ga1xAlxAsGaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ... 
The triple Si deltadoped GaAs structure
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si deltadoped GaAs, at T = 0 K. To ...