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Electronic subband of single Si delta-doped GaAs structures
(ACADEMIC PRESS LTD, 2000)
We have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and ...
The self-consistent calculation of Si delta-doped GaAs structures
(SPRINGER-VERLAG, 2001)
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping ...
Improvement in intersubband optical absorption and the effects of device parameter variations in quantum wells with an applied electric field
(ACADEMIC PRESS LTD, 1999)
The intersubband optical absorption in symmetric and asymmetric, single and coupled, double GaAs/Ga1-xAlxAs quantum wells is calculated. The results have been obtained in the presence of a uniform electric field as a ...
The electronic structure of a quantum well under an applied electric field
(ACADEMIC PRESS LTD, 1996)
The effects of an applied electric field on quantum well subband energies are calculated variationally within the effective mass approximation for model potential profiles. The concept of a quasi-bound state is examined ...
Shallow donors in a triple graded quantum well under electric and magnetic field
(ELSEVIER SCIENCE BV, 2003)
The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic and electric field ...
Intersubband optical absorption in quantum wells under applied electric and intense laser fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained ...
Effects of crossed electric and magnetic fields on shallow donor impurity binding energy in a parabolic quantum well
(IOP PUBLISHING LTD, 2004)
We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a parabolic quantum well in the presence of crossed electric and magnetic fields. These homogeneous crossed fields are such ...
Shallow donor impurities in different shaped double quantum wells under the electric field
(WILEY-V C H VERLAG GMBH, 2004)
The binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells under the electric field is calculated by using a variational ...
Intersubband optical absorption in Si delta-doped GaAs for the donor distribution and thickness as dependent on the applied electric field
(E D P SCIENCES, 2004)
We have theoretically investigated the intersubband transition for different doping concentrations and thickness in Si delta-doped GaAs with an applied electric field. The electronic properties such as the delta-potential ...
Intersubband transitions in coupled triple-graded quantum wells under an electric field
(WILEY-V C H VERLAG GMBH, 2005)
The intersubband transitions were calculated in three different shaped triple-graded quantum wells. The investigation involved changing the depth of the central well potential under an electric field applied parallel to ...
