Now showing items 1-2 of 2
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...
Hydrogenic impurities in graded GaAs-(Ga,Al)As quantum-well wires in an electric field
(ELSEVIER SCIENCE BV, 2002)
The electric field dependence of polarizability and binding energy of shallow-donor impurities in graded quantum-well wires is calculated by a variational method and in the effective-mass approximation. We have considered ...