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Electronic subband of single Si delta-doped GaAs structures
(ACADEMIC PRESS LTD, 2000)
We have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and ...
The self-consistent calculation of Si delta-doped GaAs structures
(SPRINGER-VERLAG, 2001)
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping ...
Intersubband optical absorption in quantum wells under applied electric and intense laser fields
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
Within the framework of the effective mass approximation, we have theoretically investigated the linear intersubband optical absorption in a quantum well under external electric and intense laser field. Results obtained ...
Intersubband optical absorption in Si delta-doped GaAs for the donor distribution and thickness as dependent on the applied electric field
(E D P SCIENCES, 2004)
We have theoretically investigated the intersubband transition for different doping concentrations and thickness in Si delta-doped GaAs with an applied electric field. The electronic properties such as the delta-potential ...
The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...
Intersubband transitions for single, double and triple Si delta-doped GaAs layers
(IOP PUBLISHING LTD, 2003)
The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
Subband structure and band bending in symmetric modulation-doped double quantum wells
(EDP SCIENCES S A, 2005)
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ...
