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Now showing items 11-20 of 53
The triple Si delta-doped GaAs structure
(SPRINGER, 2005)
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...
Optical transitions in quantum well wires under intense laser radiation
(ELSEVIER SCIENCE BV, 2003)
The influence of a laser-field on the exciton binding energy and interband optical transitions in quantum-well wires is calculated by using a variational method and in the effective mass approximation. We conclude that in ...
Electronic properties of Si delta-doped GaAs under an applied electric field
(IOP PUBLISHING LTD, 2001)
We have theoretically investigated the electronic structure of Si delta -doped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field ...
Effect of crossed electric and magnetic fields on donor impurity binding energy
(SPRINGER-VERLAG, 2004)
By using an appropriate coordinate transformation, we have calculated variationally the ground state binding energy of a hydrogenic donor impurity in a quantum well in the presence of crossed electric and magnetic fields ...
Barrier thickness dependence of optical absorption of excitons in GaAs coupled quantum wire
(WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)
We have calculated the binding energy of excitons, and the interband optical absorption in rectangular coupled quantum-well wires of GaAs surrounded by Ga1-chiAlchiAs in effective-mass approximation, using the variational ...
Si delta-doped GaAs structure with different dopant distribution models
(AMER INST PHYSICS, 2002)
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ...
Intersubband electron transition across a staircase potential containing quantum wells: light emission
(ACADEMIC PRESS LTD ELSEVIER SCIENCE LTD, 2005)
We present a theoretical investigation of a novel staircase-like light emitter based on the GaAs/GaxAl1-xAs material system. The emission wavelength is around 12 mum. The device operation is based on the intersubband ...
Intersubband transitions for single, double and triple Si delta-doped GaAs layers
(IOP PUBLISHING LTD, 2003)
The intersubband transitions in single, double and triple Si delta-doped GaAs structures are theoretically studied for different applied electric fields. Electronic properties such as the confining potential, the subband ...
Electronic structure of two coupled Si delta-doped GaAs as dependent on the donor thickness
(SPRINGER-VERLAG, 2003)
For the uniform distribution we have theoretically investigated the influence of donor thickness on two coupled Si delta-doped GaAs structure, at T=0 K. Electronic structure have been calculated by solving the Schrodinger ...
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
(ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)
We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ...
