Browsing Öksüz Yayınlar Koleksiyonu - WoS by Publisher "E D P SCIENCES"
Now showing items 1-5 of 5
-
An approach to adjustment of relativistic mean field model parameters
(E D P SCIENCES, 2017)The Relativistic Mean Field (RMF) model with a small number of adjusted parameters is powerful tool for correct predictions of various ground-state nuclear properties of nuclei. Its success for describing nuclear properties ... -
Electronic properties of two coupled Si delta-doped GaAs structures
(E D P SCIENCES, 2003)We have theoretically investigated the subband structure of two coupled Si delta-doped GaAs at T = 0 K. For the uniform distribution we have studied the influence of the separation between the two doping layers. The ... -
Influence of an applied electric field on the electronic properties of Si delta-doped GaAs
(E D P SCIENCES, 2003)We have theoretically studied the electronic structure of Si delta-doped GaAs inserted into an infinite quantum well as dependent on the applied electric field. For the uniform distribution we have investigated the influence ... -
Influence of temperature on the electronic properties of Si delta-doped GaAs structures
(E D P SCIENCES, 2003)We have investigated theoretically the electronic structure of Si delta-doped GaAs layers at T = 0 K and at room temperature. For a nonuniform distribution, we have studied their sensitivity to the donor concentration and ... -
Intersubband optical absorption in Si delta-doped GaAs for the donor distribution and thickness as dependent on the applied electric field
(E D P SCIENCES, 2004)We have theoretically investigated the intersubband transition for different doping concentrations and thickness in Si delta-doped GaAs with an applied electric field. The electronic properties such as the delta-potential ...