Browsing Nanoteknoloji Mühendisliği Bölümü Makale Koleksiyonu by Title
Now showing items 23-42 of 75
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High harmonic generations in GaAs/AlGaAs superlattice: Effect of electric and magnetic field
(Elsevier, 2023)In this study, we have examined the nonlinear optical rectification (NOR), the second harmonic generation (SHG), and the third harmonic generation (THG) coefficients of the AlxGa1-xAs/GaAs superlattice with a periodically ... -
High harmonic generations triggered by the intense laser field in GaAs/ AlxGa1-xAs honeycomb quantum well wires
(Elsevier, 2023)Under constant electric and magnetic fields, the potential profile of the honeycomb quantum well wire (HQWW) is studied for varying intense laser fields to trigger and optimize high harmonics (nonlinear optical rectification, ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)High crystalline and optical quality aluminum nitride (AlN) films with thin thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase epitaxy) and the NH3 flow rate has been changed to improve the morphology and ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(26.06.2022)AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE). The changes in the film structure have been investigated by applying different annealing processes which are exsitu ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN
(3.09.2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN.
(2022)The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)Carbon (C)-doped aluminum gallium arsenide ( AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ... -
Influence of hydrostatic pressure, temperature, and terahertz laser field on the electron-related optical responses in an asymmetric double quantum well
(Springer, 2021)In this study, the effects of hydrostatic pressure, temperature, and high-frequency intense laser field on the nonlinear optical properties of an asymmetric GaAs/AlGaAs double quantum well was theoretically investigated. ... -
Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
(Springer, 2023)The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ... -
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ... -
InGaAs-based Gunn light emitting diode
(14.02.2023)We report an n-type In0.53Ga0.47As based Gunn light emitting diode operated at around 1.6 μm. The device structure comprises of an n-type In0.53Ga0.47As epilayer with a thickness of 5 μm grown by Metal Organic Vapour Phase ... -
Intense laser field effect on the nonlinear optical properties of triple quantum wells consisting of parabolic and inverse-parabolic quantum wells
(IOP Publishing, 25.02.2022)The nonlinear optical rectification, the second harmonic generation coefficient, and the third harmonic generation coefficient in parabolic-inverse parabolic-parabolic quantum wells (PIPPQWs) and inverse parabolic-para ... -
Intensity-dependent nonlinear optical properties in an asymmetric Gaussian potential quantum well-modulated by external fields
(Springer, 2021)In this paper, the efects of external electric, magnetic and non-resonant intense laser felds on the nonlinear optical rectifcation (NOR), second-harmonic (SH), and third harmonic (TH) generation in a GaAs quantum well ... -
Interband transitions and exciton binding energy in a Razavy quantum well: effects of external fields and Razavy potential parameters
(Springer, 2022)In this paper, we theoretically investigated the influence of externally applied fields such as high-frequency non-resonant intense laser fields, static electric and magnetic fields, as well as structure parameters, on ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(28.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ... -
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(23.04.2023)In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO) films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...