Now showing items 1-3 of 3
Electronic subband of single Si delta-doped GaAs structures
(ACADEMIC PRESS LTD, 2000)
We have theoretically investigated the subband structure of single Si delta-doped GaAs inserted into a quantum well at T = 0 K. We will discuss the influence of the delta-doping concentration, the delta-layer thickness and ...
Binding energy of excitons in symmetric and asymmetric coupled double quantum wells in a uniform magnetic field
(IOP PUBLISHING LTD, 2000)
The binding energy of excitons in symmetric and asymmetric coupled double GaAs/Ga1-xAlxAs quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic ...
Excitonic structure in a quantum well under the tilted magnetic field
(AMER INST PHYSICS, 2000)
By using an appropriate coordinate transform we have calculated variationally the ground state exciton binding energy in the single square well under the tilted magnetic field. The dependence of the binding energy to the ...