We present a variational method to compute the binding energies for a hydrogenic impurity located at the center of the finite parabolic (PQW), V-shaped (VQW or full graded well) and square (SQW) GaAs-Ga1-xAlxAs quantum ...

Using a variational approach, we have investigated the effects of the hydrostatic pressure, the well dimension, impurity position and electric field direction on the binding energy of shallow donor impurities in GaAs/GaAlAs ...

The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ...