Browsing by Author "Sari, H"
Now showing items 41-51 of 51
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The orbit centre dependence of the energy levels in a single quantum well under external titled magnetic and electric fields
Ergun, Y; Sokmen, I; Sari, H; Elagoz, S; Arikan, MC (IOP PUBLISHING LTD, 1997)The: analytical solutions of the Schrodinger equation for a square well system subjected to an externally applied electric field in the growth direction and an externally applied tilted magnetic field are obtained and the ... -
The photoionization cross-section and binding energy of impurities in quantum wires: Effects of the electric and magnetic field
Kasapoglu, E; Sari, H; Yesilgul, U; Sokmen, I (WORLD SCIENTIFIC PUBL CO PTE LTD, 2004)Using a variational approach, we have calculated the impurity position dependence of the photoionizaton cross-section and the binding energy for a hydrogenic donor impurity in a quantum well wire in the presence of the ... -
Photoionization of donor impurities in quantum wires in a magnetic field
Sari, H; Sokmen, I; Yesilgul, U (IOP PUBLISHING LTD, 2004)Using a variational approach, we have calculated the impurity position dependence of the photoionization cross-section and the binding energy of a hydrogenic donor impurity in a quantum well wire in the presence of the ... -
The self-consistent calculation of Si delta-doped GaAs structures
In this study, we report results of a self-consistent calculation obtained for the sub-band structure of Si delta -doped GaAs material by using a new alternative method. We will discuss the influence of the delta -doping ... -
Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field
Kasapoglu, E; Sari, H; Sokmen, I (ELSEVIER SCIENCE BV, 2005)The combined electric field and hydrostatic pressure effects on the binding energy of the donor impurity in double triangle quantum well (DTQW), double graded (DGQW) and double square (DSQW) GaAs-(Ga,Al)As quantum wells ... -
Shallow donors in a triple graded quantum well under electric and magnetic field
Sari, H; Kasapoglu, E; Sokmen, I (ELSEVIER SCIENCE BV, 2003)The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic and electric field ... -
Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields
Kasapoglu, E; Sari, H; Sokmen, I (ELSEVIER SCIENCE BV, 2006)The binding energy of the donor in the triple-graded GaAs-(Ga,Al)As quantum well under the hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. The results have been obtained ... -
Si delta-doped GaAs structure with different dopant distribution models
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ... -
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ... -
The triple Si delta-doped GaAs structure
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...