Browsing by Author "Sokmen, I"
Now showing items 61-68 of 68
-
Shallow donor impurity binding energy in the V-shaped quantum well under the crossed electric and magnetic fields
Kasapoglu, E; Sokmen, I (ELSEVIER SCIENCE BV, 2005)We have calculated variationally the ground state binding energy of a hydrogenic donor impurity in V-shaped quantum well (VQW) or full-graded GaAs/Ga1-xAlxAs quantum wells in the presence of crossed electric and magnetic ... -
Shallow donors in a triple graded quantum well under electric and magnetic field
Sari, H; Kasapoglu, E; Sokmen, I (ELSEVIER SCIENCE BV, 2003)The binding energy of the donor impurity in triple graded GaAs-(Ga,Al)As quantum wells is calculated by using a variational approach. The results have been obtained in the presence of a uniform magnetic and electric field ... -
Shallow donors in the triple-graded quantum well under the hydrostatic pressure and external fields
Kasapoglu, E; Sari, H; Sokmen, I (ELSEVIER SCIENCE BV, 2006)The binding energy of the donor in the triple-graded GaAs-(Ga,Al)As quantum well under the hydrostatic pressure, electric and magnetic fields are calculated by using a variational approach. The results have been obtained ... -
Si delta-doped GaAs structure with different dopant distribution models
We have theoretically investigated the diffusion of donor impurities of single Si delta-doped GaAs inserted into a quantum well at T=0 K. The spread of the impurities is taken into account in three different models: (i) a ... -
Subband structure and band bending in symmetric modulation-doped double quantum wells
We have calculated the subband structure and confinement potential of modulation-doped Ga1-xAlxAs-GaAs symmetric double quantum wells a function of the doping concentration. Electronic properties of this structure are ... -
Subband structure and excitonic binding of graded GaAs/Ga1-xAlxAs quantum wells under an electric field
The effects of an applied electric field on subband energies and excitonic binding for a graded GaAlAs quantum well are calculated variationally within the effective mass approximation. The very sensitive dependence of ... -
Tilted magnetic field effect on the subbands of a GaAlAs diode with a GaAs quantum well
Turkoglu, A; Amca, R; Ergun, Y; Sokmen, I; Balkan, N (ACADEMIC PRESS LTD- ELSEVIER SCIENCE LTD, 2003)We have calculated the subbands in the GaAs quantum well at the n-side of the junction in a Ga1-xAlxAs diode. We show that the density of carriers confined in the quantum well increases by the increasing magnetic field ... -
The triple Si delta-doped GaAs structure
For the uniform donor distribution we have theoretically investigated the influence of the separation between the adjacent two doping layers on the electronic structure of the triple Si delta-doped GaAs, at T = 0 K. To ...