Photoionization cross-section and binding energy of donor impurities in GaAs, Ge and Si quantum wires with infinite barriers
Özet
Within the effective-mass approximation, we have investigated the binding energies of donor impurities as a function of the wire dimensions and the photoionization cross-section for a hydrogenic donor impurity placed on the center of the quantum well-wire as a function of the normalized photon energy in the GaAs, Ge and Si quantum wires with infinite barriers. The calculations are performed by the variational method based on a two-parametric trial wave function. The results show that the impurity binding energy and the photoionization cross-section depend strongly on both wire dimensions and material parameters. (C) 2009 Elsevier Ltd. All rights reserved.
Kaynak
SUPERLATTICES AND MICROSTRUCTURESCilt
46Sayı
3Koleksiyonlar
- Makale Koleksiyonu [5200]
- Makale Koleksiyonu [5745]
- Öksüz Yayınlar Koleksiyonu - WoS [6162]