The polarizability and the photoionization cross-section under the external fields for donor impurities in quantum well-wire
Abstract
In this study, we have calculated the donor impurity binding energy, donor impurity related photoionization cross-section and polarizability in symmetric GaAs/Ga1-xAlxAs quantum well-wire as a function of the impurity positions, dimensions of the structures and external electric and magnetic field, the calculations were performed within the effective mass approximation, using a variational method.
Source
PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2Volume
4Issue
2Collections
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