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Now showing items 31-40 of 45
Comprehensive growth and characterization study of GeOx/Si
(15.02.2023)
In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical ...
High-quality AlN growth: a detailed study on ammonia flow
(25.01.2023)
High crystalline and optical quality aluminum nitride (AlN) films with thin
thickness have been grown on Al2O3 by MOVPE (metal-organic vapor phase
epitaxy) and the NH3 flow rate has been changed to improve the morphology
and ...
Effect of Si-doped and undoped inter-layer transition time on the strain-compensated InGaAs/InAlAs QCL active region grown with MOVPE
(15.01.2023)
In this study, we report the effect of the combination of Si-doped and undoped inter-layer transition
time in the strain compensated In 0.67 Ga 0.33 As/In 0.36 Al 0.64 As quantum cascade laser (QCL) structure grown
on ...
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to
LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ...
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(23.04.2023)
In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO)
films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...
Influence of Highly Efficient Carbon Doping on AlxGa1− xAs Layers with Different Al Compositions (x) Grown by MOVPE
(27.06.2023)
Carbon (C)-doped aluminum gallium arsenide (
AlxGa1−xAs) epitaxial layers with different aluminum (Al) concentrations
have been grown on gallium arsenide (GaAs) substrates by metalorganic vapor phase epitaxy (MOVPE) ...
Evaluation of factors affecting tetracycline and diclofenac adsorption by agricultural soils using response surface methodology
(AICHE, 2023)
The adsorption process of the pharmaceutical pollutant in the soil is affected by its physicochemical properties and soil properties. In this study, the factors affecting the adsorption of tetracycline and diclofenac onto ...
ESTAŞ DOMESTIC AND NATIONAL NITRILE GLOVE PRODUCTION
(2023)
Although the role of entrepreneurship has been recognized by societies throughout history, the role of
intrapreneurship in existing businesses is a relatively new phenomenon. Especially in recent years, with
the acceleration ...
PARAMETERS AFFECTING MICRO ARC OXIDATION PROCESS, BIOCOMPATIBILITY AND PARTICLE ADDITION
(2023)
Micro Arc Oxidation (MAO) is used in many areas in the biomedical
applications (medicine, dentistry), automotive, military, textile industry,
maritime industry, aircraft and space sectors because it creates high
temperature ...