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Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)
Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate
InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While
all other sources ...
Surface geophysical methods used to verify the karst geological structure in the built-up area: a case study of specific engineering-geological conditions
(2021)
This article presents a research study of complex limestone karst engineering-geological conditions in the municipality Valaská near Banská Bystrica in Slovakia. The aim of the study is to demonstrate the impossibility of ...
Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
(6.11.2021)
In the present study, the nonlinear optical rectification (NOR), second harmonic generation
(SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with
exponentially confinement potential ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Templated grain growth of Bi(Zn0.5Zr0.5)O3 modified BiScO3−PbTiO3 piezoelectric ceramics for high temperature applications
(Taylor & Francis, 2021)
2.5Bi(Zn0.5Zr0.5)O3−37.5BiScO3−60PbTiO3 (BZZ-BS-PT) ceramics were successfully textured in the [001] by templated grain growth (TGG) process using 5 vol% <001>-oriented BaTiO3 (BT) plate-like templates. The templates were ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
Vcsel tabanlı yüksek güçlü yarı iletken lazerler
(15.01.2021)
VCSEL’ler (vertical-cavity surface-emitting laser, düşey- kovuklu yüzey-ışımalı lazer) yirmi yılı aşkın bir süredir giderek gelişen veri iletişimi (datacom) alanının anahtar bileşenlerinden birisidir. Bunun yanında son ...
Synthesis of PEGylated nanographene oxide as a nanocarrier for docetaxel drugs and anticancer activity on prostate cancer cell lines
(SAGE, 01.01.2021)
Graphene oxide (GO) has recently been considered one of the most promising carbon derivatives in nanotechnology. It has many excellent features such as tumor targeting ability, biocompatibility and low toxicity.
Therefore, ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...