Characterization of multilayer Al doping in ZnO
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Date
2021Author
Şenadım Tüzemen, EbruMuğlu, Günay Merhan
Alaydın, Behçet Özgür
Altun, Didem
Kılıç Çetin, Selda
Gür, Emre
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1 Department of Physics, Faculty of Science, Sivas Cumhuriyet University, 58140 Sivas, Turkey 2 Nanophotonic Application and Research Center, Sivas Cumhuriyet University, 58140 Sivas, Turkey 3 Department of Medical Techniques and Services, Hınıs Vocational College, Ataturk University, 25250 Erzurum, Turkey 4 Sivas Vocational College, Sivas Cumhuriyet University, 58140 Sivas, Turkey 5 Central Research Laboratory, Çukurova University, 01330 Adana, Turkey 6 Department of Physics, Faculty of Science, Ataturk University, 25240 Erzurum, TurkeyAbstract
ZnO, ZnO/Al, Al/ZnO/Al, and ZnO/Al/ZnO samples were deposited on c-plane sapphire and Si substrates by radio frequency
magnetron sputtering (RFMS) using ZnO target. In order to form doped ZnO:Al thin films, these grown samples were annealed at
temperatures of 450°C for 1 h to let diffuse Al atoms into the ZnO. After annealing homogeneous Al, diffusion is observed for the
sample having Al layer at the top and the bottom of the ZnO from the cross-sectional SEMimages. The effects of Al diffusion on
structural, optical, electrical, and magnetic properties of ZnO layers were investigated by using x-ray diffraction (XRD), optical
transmittance, sheet resistance, and magnetic field dependence of magnetization (M(H)) measurements. After annealing, the
optical transmissions of samples were higher than 60%in the visible and near-infrared region for all samples. The sheet resistance
measurement results showed that the conductivity of Al/ZnO/Al deposited on sapphire was found to be 2.64 × 101 (Ω)−1 after
annealing. The magnetismmeasurement results in that all samples show a weak ferromagnetic behavior except for the Al/ZnO/Al
sample, which is attributed to the interface exchange coupling between the layers.