Effects of applied external fields on the nonlinear optical rectification, second, and third harmonic generation in a quantum well with exponentially confinement potential
Citation
1Department of Nanotechnology Engineering, Faculty of Engineering, Sivas Cumhuriyet University, 58140 Sivas, Turkey 2Nanophotonics Research and Application Center, Sivas Cumhuriyet University, 58140 Sivas, TurkeyAbstract
In the present study, the nonlinear optical rectification (NOR), second harmonic generation
(SHG), and third harmonic generation (THG) coefficients in GaAs/GaAlAs quantum well (QW) with
exponentially confinement potential were theoretically analyzed for different applied static electric and
magnetic fields as well as the non-resonant intense laser field (ILF). In addition, the effect of adjustable
physical parameters (η and κ) on the optical properties was also investigated. The subband energy levels
and their corresponding envelope wave functions of an electron confined in a QW with exponentially
confinement potential are calculated by diagonalization method within the framework of effective mass
and single parabolic band approximations. The analytical expressions of the NOR, SHG, and THG are
obtained using compact density matrix approach via iterative method. The numerical results show that
the applied external fields and physical parameters have a great effect on the optical characteristics of the
considered system. In particular, we have found the applied external fields have a significant effect on the
position and magnitude of resonant peaks of NOR, SHG, and THG.