Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
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Date
02.02.2021Author
Altuntas, İsmailKoçak, Merve Nur
Gür, Emre
Yolcu, Gamze
Budak, Hasan Feyzi
Kasapoğlu, A. Emre
Horoz, Sabit
Demir, İlkay
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Altuntas, I., Kocak, M. N., Yolcu, G., Budak, H. F., Kasapoğlu, A. E., Horoz, S., ... & Demir, I. (2021). Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111). Materials Science in Semiconductor Processing, 127, 105733.Abstract
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were
investigated by secondary ion mass spectroscopy (SIMS). It was observed that O and Si concentration change
with growth temperature of epilayers as well as the interface significantly. HRXRD (high-resolution x-ray
diffraction) analyses showed that the highest growth temperature results with the lowest full width at half
maximum (FWHM) value for both ɷ scans. Scanning electron microscope (SEM) and atomic force microscopy
(AFM) analyses indicated that relatively low growth temperature grown samples gave rise to 2D-like growth
mode with openings while increased growth temperature resulted in change the growth mode to a columnar
mode with increasing V-shape pits because of the increasing diffusion coefficient of O impurities and Si atoms in
AlN epilayers.