High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
Tarih
22/11/2021Yazar
Alaydin, Behçet ÖzgürKeller, Ursula
Barh, Ajanta
Gaulke, Marco
Golling, Matthias
Heidrich, Jonas
Üst veri
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We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of around 2𝜇��m. To date, intracavity heatspreaders have been required for good average output power, which have many trade-offs, especially for passive modelocking. Here we demonstrate a record high average output power of 810 mW without an intracavity heatspreader using a backside-cooled non-resonant VECSEL chip optimized for modelocking. In addition, we introduce and demonstrate an optical characterization for a wavelength range of 1.9 to 3𝜇��m to precisely measure wavelength-dependent gain saturation and spectral gain. Gain characteristics are measured as a function of wavelength, fluence, pump power and temperature. Small signal gain of more than 5%, small saturation fluences and broad gain bandwidths of more than 90 nm are demonstrated. In comparison to a commercial VECSEL chip with an intracavity heatspreader, we have obtained similar average output power even though our VECSEL chip is designed for antiresonance.
Bağlantı
https://opg.optica.org/oe/fulltext.cfm?uri=oe-29-24-40360&id=464954https://hdl.handle.net/20.500.12418/13048