Effects of Applied Magnetic Field on the Optical Properties and Binding Energies Spherical GaAs Quantum Dot with Donor Impurity
Özet
The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts
of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties
spherical GaAs quantum dot with donor impurity (DI). To accomplish this goal, we have used the
diagonalization method to numerically solve the Schrödinger equation under the effective mass
approximation for obtaining the electron energy levels and related electronic wave functions. The
expressions used for evaluating linear, third-order nonlinear, and total optical absorption coefficients
and relative refractive index changes were previously derived within the compact density matrix
method. It has been shown here that the MF and DI impacts the characteristics of the absorption coefficients
and the refractive index changes. This study’s results will find application in optoelectronics
and related areas.