dc.contributor.author | Alaydin, Behçet Özgür | |
dc.contributor.author | Altun, Didem | |
dc.contributor.author | Öztürk, Emine | |
dc.date.accessioned | 2023-04-12T10:07:19Z | |
dc.date.available | 2023-04-12T10:07:19Z | |
dc.date.issued | Haziran 2022 | tr |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/13647 | |
dc.description.abstract | In this paper, we have studied the optical properties of semi-elliptical InAs quantum dots (QDs) embedded in
GaAs. Under effective mass approximation, the finite element method has been used to obtain wavefunctions and
corresponding energy eigenvalues in three-dimension. It has been shown that the wetting layer (WL) thickness
has a small effect on the (1-2) transition, but is more effective on the dipole moment matrix element (DMME) of
the (2-3) and (1-3) transitions. It is seen that the linear absorption coefficients of the (2-3) and (1-3) transition
reach the maximum at 4 A WL thickness. After that, we set the WL thickness to 4 A and we studied the effect of
the electric field applied through the axial direction. The same as the WL effect, the electric field has caused a
minor change in DMME of the (1-2) transition but it makes DMME of the (2-3) and (1-3) transitions stronger
which results in very high linear absorption coefficients. For 20 kV/cm electric field intensity, the linear absorption
coefficient reaches the maximum for the (2-3) and (1-3) transition. | tr |
dc.language.iso | eng | tr |
dc.publisher | Thin Solid Films | tr |
dc.rights | info:eu-repo/semantics/restrictedAccess | tr |
dc.title | Linear and nonlinear optical properties of semi-elliptical InAs quantum dots: Effects of wetting layer thickness and electric field | tr |
dc.type | article | tr |
dc.contributor.department | Eğitim Bilimleri Enstitüsü | tr |
dc.contributor.authorID | 0000-0002-1964-3538 | tr |
dc.relation.publicationcategory | Uluslararası Kitapta Bölüm | tr |