Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE

Abstract

teristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. Adjustment of growth kinetics is very important to control the doping. Therefore, pulsed atomic layer epitaxy (PALE) was used to control the growth kinetics and reduce parasitic reactions that inevitably caused adverse impact on the properties of the epitaxial AlN films. As a result of HRXRD (high resolution x-ray diffraction) analysis, the (002) ω FWHM decreased significantly with the PALE method, while the increase occurred due to the development of V defects for the (102) ω scan. Atomic force microscopy (AFM) analyzes showed that SiH4 led to a 3D-like growth mode. It was demonstrated that the increased SiH4 flow increased Si incorporation into the Si-doped AlN layer while increased the sheet resistance due to the self-compensating effect obtained from secondary ion mass spectroscopy (SIMS) and I–V measurement results.