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dc.contributor.authorTüzemen, A. T.
dc.contributor.authorDakhlaoui H
dc.contributor.authorUngan, Fatih
dc.date.accessioned2024-02-26T07:01:59Z
dc.date.available2024-02-26T07:01:59Z
dc.date.issued2023tr
dc.identifier.urihttps://hdl.handle.net/20.500.12418/14292
dc.description.abstractFor the first time, the impact of externally applied static electric and magnetic field on the nonlinear op- tical rectification (NOR) and second harmonic generation (SHG) coefficients of GaAs/GaAlAs zigzag quan- tum well is theoretically investigated in this study. Additionally, we examined the effect of physical pa- rameters such as width and depth of the structure on these coefficients. We have numerically solved the time-independent Schrödinger equation by using the diagonalization method under the effective mass approximation for obtaining subband energy levels and wave functions of the structure, and then we have used the compact density matrix method to obtain the analytical expressions of NOR and SHG coef- ficients. The obtained numerical results showed that when the magnitude of the externally applied elec- tric and magnetic fields is increased, the peak position of NOR and SHG shifts to blue, and by increasing the width and potential depth of the quantum well, it shifts to red.tr
dc.language.isoengtr
dc.rightsinfo:eu-repo/semantics/closedAccesstr
dc.titleEffects of external fields on the nonlinear optical rectification and second harmonic generation of GaAs/GaAlAs zigzag quantum welltr
dc.typearticletr
dc.contributor.departmentFen Fakültesitr
dc.contributor.authorID0000-0003-3533-4150tr
dc.relation.publicationcategoryRaportr


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