Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure
Citation
Sayrac, M., Belhadj, W., Dakhlaoui, H. et al. Influence of structural variables and external perturbations on the nonlinear optical rectification, second, and third-harmonic generation in the InP/InGaAs triple quantum well structure. Eur. Phys. J. Plus 138, 1013 (2023).Abstract
The InP/InGaAs triple quantum well (TQW) structure is of significant interest to researchers studying new generations
of semiconductor optoelectronic devices, as it offers valuable opportunities for controlling and enhancing the nonlinear optical
processes in these devices. By applying external fields, such as hydrostatic pressure (P), temperature (T), and external electric field
(F), the nonlinear optical properties of the InP/InGaAs TQWstructure can be controlled and manipulated. This study investigates the
effects of structure parameters of quantum well barriers and well widths (Lb and Lw) and the aforementioned external perturbations
on the nonlinear optical properties, including the coefficients of nonlinear optical rectification (NOR), second-harmonic generation
(SHG), and third-harmonic generation (THG) of the TQW structure. The energy eigenvalues and eigenfunctions of the confined
single electron in TQWare obtained using the diagonalizationmethod within the framework of the effectivemass and parabolic band
approximations. Moreover, employing the compact density matrix approximation for calculating the coefficients of the nonlinear
optical response provides a computationally efficient way to assess the nonlinear optical properties of the TQW structure. The
numerical results have significant potential to advance the understanding and design of semiconductor optoelectronic devices based
on the InP/InGaAs triple quantum well structure. Exploring the effects of different parameters and external fields can lead to deeper
insights into the underlying physics and may unlock new opportunities for developing innovative and high-performance devices.
Source
Eur. Phys. J. PlusVolume
138Issue
1013URI
https://link.springer.com/article/10.1140/epjp/s13360-023-04630-whttps://hdl.handle.net/20.500.12418/14369