Comprehensive growth and characterization study of GeOx/Si

Abstract

In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural and optical properties of high-quality germanium dioxide ( GeO 2 ) thin films have been investigated by experimental. Structural properties were investigated using X-ray diffraction. It has been observed that the peak intensity of (113) reflection is the highest in the spectrum of 240.22 nm thickness and using scanning electron microscope (SEM) to calculate thickness of different samples. Reflection measurement, which is one of its optical properties, was measured with an optical spectrophotometer. It has been observed that as the thickness increases, the total reflectance changes. The absorption coefficient was calculated using the diffuse reflection curve. From this point of view, the energy band gap was calculated and it was seen that it varies between 4.1 eV and 4.4 eV. As a result, it was observed that the energy band gap increased as the thickness increased. And using spectroscopic ellipsometry to calculate the thickness of different, refractive index, extinction coefficient, and oscillator parameters. The oscillator energy decrease as the thickness of films increases and the dispersion energy increase with the increase of thickness. It have been observed that the thickness varies between 174.29 nm and 332.16 nm. The refractive index increases as the thickness increases.