Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
Date
14.10.2023Author
Baghdedi, DhouhaHopoğlu, Hicret
Demir, İlkay
Altuntaş, İsmail
Abdelmoula, Najmeddine
Şenadım, Tüzemen Ebru
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In this study, GeOx
thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at
how the temperature of the substrate affected the Raman spectra and optical characteristics of GeOx
thin films. X-ray diffraction
was utilized to examine the crystal structure, and a scanning electron microscope was utilized to measure the thickness.
In order to investigate the local structure and bonding characteristics, Raman spectroscopy was used. The refractive index,
extinction coefficient, and dielectric parameters were calculated using spectroscopic ellipsometry for the 300–1100 nm
spectral region. Refractive index and extinction coefficient spectral patterns were discovered by using a sample-air optical
model to analyze the experimental ellipsometric data. Notably, a considerable rise in the refractive index was accompanied
by a rise in substrate temperature.