Comprehensive growth and characterization study of GeOx/Si
Date
15.02.2023Author
Baghdedi, DhouhaHopoğlu, Hicret
Sarıtaş, Sevda
Altuntaş, İsmail
Abdelmoula, Najmeddine
Gür, Emre
ŞenadımTüzemen, Ebru
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In this study, the reactive radio frequency magnetron sputtering (RFMS) method under varying thickness
was used to deposit GeO x on Si substrate at room temperature. The effect of thickness on the structural
and optical properties of high-quality germanium dioxide ( GeO 2 ) thin films have been investigated by
experimental. Structural properties were investigated using X-ray diffraction. It has been observed that
the peak intensity of (113) reflection is the highest in the spectrum of 240.22 nm thickness and using
scanning electron microscope (SEM) to calculate thickness of different samples. Reflection measurement,
which is one of its optical properties, was measured with an optical spectrophotometer. It has been observed
that as the thickness increases, the total reflectance changes. The absorption coefficient was calculated
using the diffuse reflection curve. From this point of view, the energy band gap was calculated and
it was seen that it varies between 4.1 eV and 4.4 eV. As a result, it was observed that the energy band gap
increased as the thickness increased. And using spectroscopic ellipsometry to calculate the thickness of
different, refractive index, extinction coefficient, and oscillator parameters. The oscillator energy decrease
as the thickness of films increases and the dispersion energy increase with the increase of thickness. It
have been observed that the thickness varies between 174.29 nm and 332.16 nm. The refractive index
increases as the thickness increases.