dc.contributor.author | Gupta, Ritu | |
dc.contributor.author | Bhandari, Shapath | |
dc.contributor.author | Kaya,Savaş | |
dc.contributor.author | Katin, Konstantin P. | |
dc.contributor.author | Mondal, Prakash Chandra | |
dc.date.accessioned | 2024-03-07T10:26:02Z | |
dc.date.available | 2024-03-07T10:26:02Z | |
dc.date.issued | 2023 | tr |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/14908 | |
dc.description.abstract | We describe here the fabrication of large-area molecular
junctions with a configuration of ITO/[Ru(Phen)3]/Al to understand
temperature- and thickness-dependent charge transport phenomena.
Thanks to the electrochemical technique, thin layers of electroactive
ruthenium(II)−tris(phenanthroline) [Ru(Phen)3] with thicknesses of
4−16 nm are covalently grown on sputtering-deposited patterned ITO
electrodes. The bias-induced molecular junctions exhibit symmetric
current−voltage (j−V) curves, demonstrating highly efficient long-range
charge transport and weak attenuation with increased molecular film
thickness (β = 0.70 to 0.79 nm−1). Such a lower β value is attributed to
the accessibility of Ru(Phen)3 molecular conduction channels to Fermi
levels of both the electrodes and a strong electronic coupling at ITO−
molecules interfaces. The thinner junctions (d = 3.9 nm) follow charge transport via resonant tunneling, while the thicker junctions
(d = 10−16 nm) follow thermally activated (activation energy, Ea ∼ 43 meV) Poole−Frenkel charge conduction, showing a clear
“molecular signature” in the nanometric junctions. | tr |
dc.rights | info:eu-repo/semantics/openAccess | tr |
dc.title | Thickness-Dependent Charge Transport in Three Dimensional Ru(II)− Tris(phenanthroline)-Based Molecular Assemblies | tr |
dc.type | article | tr |
dc.contributor.department | Sağlık Hizmetleri Meslek Yüksekokulu | tr |
dc.relation.publicationcategory | Uluslararası Editör Denetimli Dergide Makale | tr |