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Effects of an intense, high-frequency laser field on the intersubband transitions and impurity binding energy in semiconductor quantum wells
(ELSEVIER SCIENCE BV, 2010)
Within the framework of effective-mass approximation, using a variational method, the effect of high-frequency laser field on intersubband transitions and the binding energy of shallow-donor impurities in a semiconductor ...
Electronic structure and optical properties of triangular GaAs/AlGaAs quantum dots: Exciton and impurity states
(ELSEVIER SCIENCE BV, 2016)
Electronic structure and optical properties in equilateral triangular GaAs/Al0.3Ga0.7As quantum dots are studied extensively. The effects of donor and acceptor impurity atoms positioned in the orthocenter of the triangle, ...
Intense laser-induced electronic and optical properties in double finite oscillator potential
(TAYLOR & FRANCIS LTD, not define)
In the present paper, a theoretically study of the non-resonant laser field effect on the optical response, such as nonlinear optical rectification (NOR), second (SHG) and third harmonic generation (THG) coefficients in ...
Optical response in a laser-driven quantum pseudodot system
(ELSEVIER SCIENCE BV, 2017)
We investigate theoretically the intense laser-induced optical absorption coefficients and refractive index changes in a two-dimensional quantum pseudodot system under an uniform magnetic field. The effects of non-resonant, ...
Combined effects of the intense laser field, electric and magnetic fields on the optical properties of n-type double delta-doped GaAs quantum well
(ELSEVIER SCIENCE BV, 2017)
In the present work, the effects of the non-resonant intense laser field, electric and magnetic fields on the optical properties, such as linear, third order nonlinear and the total optical absorption coefficient and ...
The effects of the electric and magnetic fields on the nonlinear optical properties in the step-like asymmetric quantum well
(ELSEVIER SCIENCE BV, 2014)
In the present work, total optical absorption coefficient (the linear and third-order nonlinear) and total refractive index change for transition between two first lower-lying electronic levels in the step-like GaAs/Ga1-xAlxAs ...
Optical properties of the Tietz-Hua quantum well under the applied external fields
(ELSEVIER SCIENCE BV, 2017)
In this study, the effects of the electric and magnetic fields as well as structure parameter-gamma on the total absorption coefficient, including linear and third order nonlinear absorption coefficients for the optical ...
Effect of the magnetic field on the nonlinear optical rectification and second and third harmonic generation in double delta-doped GaAs quantum wells
(ELSEVIER SCIENCE BV, 2017)
In this paper we are reporting the computation for the Nonlinear Optical Rectification (NOR) and the Second and Third Harmonic Generation (SHG and THG) related with electronic states of asymmetric double Si-d-doped quantum ...
Intersubband optical absorption coefficients and refractive index changes in modulation-doped asymmetric double quantum well
(PERGAMON-ELSEVIER SCIENCE LTD, 2011)
The linear and the third-order nonlinear optical absorption coefficients and refractive index changes in a modulation-doped asymmetric double quantum well are studied theoretically. The electron energy levels and the ...
The effect of the intense laser field on the intersubband transitions in Ga1-xInxNyAs1-y/GaAs single quantum well
(ELSEVIER SCIENCE BV, 2011)
The effect of the intense laser field on the intersubband optical absorption for (1-2) transition in a Ga1-xInxNyAs1-y/GaAs single quantum well for different nitrogen and indium concentrations is investigated. The numerical ...