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dc.contributor.authorŞenadim E.
dc.contributor.authorErgun Y.
dc.date.accessioned2019-07-27T12:10:23Z
dc.date.accessioned2019-07-28T09:12:47Z
dc.date.available2019-07-27T12:10:23Z
dc.date.available2019-07-28T09:12:47Z
dc.date.issued2004
dc.identifier.issn1300-0101
dc.identifier.urihttps://hdl.handle.net/20.500.12418/4485
dc.description.abstractIn this work, we calculate the power reflectivity in vertical cavity surface emitting lasers (VCSELs) using a new method. In VCSELs, the stop band of the reflectivity spectrum should exhibit a dip at the lasing wavelength, which is a condition for lasing. This current approximation method gives a simple analytical expression to find the power reflectivity as a function of wavelength in the vicinity of lasing wavelength, ?o. The proposed method can generally be applied to semiconductor VCSEL systems for a given lasing wavelength.en_US
dc.language.isoengen_US
dc.rightsinfo:eu-repo/semantics/closedAccessen_US
dc.titleSingle mode optical radiation distribution and reflectivity calculations in novel-hot electron light emission and lasing in semiconductor heterostructures VCSELsen_US
dc.typearticleen_US
dc.relation.journalTurkish Journal of Physicsen_US
dc.contributor.departmentŞenadim, E., Cukurova University, Department of Physics, Adana, Turkey -- Ergun, Y., Cumhuriyet University, Department of Physics, 58140 Sivas, Turkeyen_US
dc.identifier.volume28en_US
dc.identifier.issue5en_US
dc.identifier.endpage347en_US
dc.identifier.startpage341en_US
dc.relation.publicationcategoryMakale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanıen_US


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