dc.contributor.author | Öztürk E. | |
dc.date.accessioned | 2019-07-27T12:10:23Z | |
dc.date.accessioned | 2019-07-28T09:13:03Z | |
dc.date.available | 2019-07-27T12:10:23Z | |
dc.date.available | 2019-07-28T09:13:03Z | |
dc.date.issued | 2002 | |
dc.identifier.issn | 1300-0101 | |
dc.identifier.uri | https://hdl.handle.net/20.500.12418/4589 | |
dc.description.abstract | We investigated theoretically the change of electronic properties of Si ?-doped GaAs layer as a function of temperature. We studied the influence of temperature on the donor concentration for a nonuniform distribution, which is taken as different from the known Gaussian distribution. In order to obtain the electronic structure we have calculated self-consistent Schrödinger - Poisson equations. We have seen that the change of the electronic properties as dependent on temperature is less pronounced at higher doping concentration. | en_US |
dc.language.iso | eng | en_US |
dc.rights | info:eu-repo/semantics/closedAccess | en_US |
dc.subject | ?-doped GaAs | en_US |
dc.subject | Electronic structure | en_US |
dc.subject | Temperature-dependence | en_US |
dc.title | The temperature dependence of the electronic structure of Si ?-doped GaAs | en_US |
dc.type | article | en_US |
dc.relation.journal | Turkish Journal of Physics | en_US |
dc.contributor.department | Öztürk, E., Cumhuriyet University, Department of Physics, 58140 Sivas, Turkey | en_US |
dc.identifier.volume | 26 | en_US |
dc.identifier.issue | 6 | en_US |
dc.identifier.endpage | 471 | en_US |
dc.identifier.startpage | 465 | en_US |
dc.relation.publicationcategory | Makale - Uluslararası Hakemli Dergi - Kurum Öğretim Elemanı | en_US |