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Now showing items 41-50 of 161
Neuro-fuzzy modeling of deformation parameters for fusion-barriers
(2021)
The fusion-barrier distribution is very sensitive to the structure of the colliding nuclei such as nuclear quadrupole and hexadecapole deformation parameters and their signs. If the nuclei that enter the fusion reaction ...
Analysis of the anomalous quartic W W W W couplings at the LHeC and the FCC-he
(19 July 20)
The quartic gauge boson couplings that identify the strengths of the gauge boson
self-interactions are exactly determined by the non-Abelian gauge nature of the Standard
Model. The examination of these couplings at ep ...
Watt-level and sub-100-fs self-starting mode-locked 2.4-µm Cr:ZnS oscillator enabled by GaSb-SESAMs
(09/02/2021)
Femtosecond lasers with high peak power at wavelengths above 2 µm are of high interest for generating mid-infrared (mid-IR) broadband coherent light for spectroscopic applications. Cr2+-doped ZnS/ZnSe solid-state lasers ...
Model-independent limits for anomalous triple gauge bosons W + W − γ couplings at the CLIC
(18 June 20)
In this study, we investigate the potential of the γ γ → W + W − , e + γ →
e+ γ ∗ γ → e + W − W + and e+ e− → e+ γ ∗ γ ∗ e− → e + W − W + e − processes at the Com-
pact Linear Collider (CLIC) operating in γ γ , γ ∗ γ and ...
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
(01/03/2021)
Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires ...
Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties
(2021)
Un-doped and nitrogen-doped ZnO thin films were grown by using radio frequency (RF) magnetron sputtering
method changing the nitrogen flow rate between 0% ����� 12.5% and the thickness dependence of films was
determined. ...
Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing
(2021)
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target
by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 ◦C at variable RF power ...
Characterization of multilayer Al doping in ZnO
(2021)
ZnO, ZnO/Al, Al/ZnO/Al, and ZnO/Al/ZnO samples were deposited on c-plane sapphire and Si substrates by radio frequency
magnetron sputtering (RFMS) using ZnO target. In order to form doped ZnO:Al thin films, these grown ...
Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates
(2021)
In this study, high-quality p-type NiO semiconductor thin film was investigated using the thermal evaporation method after thermal oxidation of as-deposited 50 nm Ni film at 450◦C for 2.5 h. NiO thin film simultaneously ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...