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Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications
(20/01/2021)
Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.30As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic ...
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
(01/03/2021)
Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires ...
Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties
(2021)
Un-doped and nitrogen-doped ZnO thin films were grown by using radio frequency (RF) magnetron sputtering
method changing the nitrogen flow rate between 0% ����� 12.5% and the thickness dependence of films was
determined. ...
Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing
(2021)
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target
by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 ◦C at variable RF power ...
Characterization of multilayer Al doping in ZnO
(2021)
ZnO, ZnO/Al, Al/ZnO/Al, and ZnO/Al/ZnO samples were deposited on c-plane sapphire and Si substrates by radio frequency
magnetron sputtering (RFMS) using ZnO target. In order to form doped ZnO:Al thin films, these grown ...
Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates
(2021)
In this study, high-quality p-type NiO semiconductor thin film was investigated using the thermal evaporation method after thermal oxidation of as-deposited 50 nm Ni film at 450◦C for 2.5 h. NiO thin film simultaneously ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Effects of Applied Magnetic Field on the Optical Properties and Binding Energies Spherical GaAs Quantum Dot with Donor Impurity
(2022/8/10)
The screened modified Kratzer potential (SMKP) model is utilized to scrutinize the impacts of an applied magnetic field (MF) on the binding energies and linear and nonlinear optical properties spherical GaAs quantum dot ...
Photoionization cross section of a D-2(+) complex in quantum dots: the role of donor atoms configuration
(2022/8/1)
This study reports a theoretical investigation on the electronic spectrum and the photoionization cross section of a singly ionized double donor complex D_2^+ confined in a two-dimensional quantum dot with Gaussian confinement ...
Energy spectrum and interlevel transitions within the conduction band of a D_2^+ complex confined in a spherical quantum dot
(2022/12)
In this work, we have performed a theoretically study on the energy spectrum, binding energy and interlevel transitions within the conduction band of a D+2 complex confined in a spherical quantum dot with finite confinement ...