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Now showing items 31-40 of 129
Analysis of the anomalous quartic W W W W couplings at the LHeC and the FCC-he
(19 July 20)
The quartic gauge boson couplings that identify the strengths of the gauge boson
self-interactions are exactly determined by the non-Abelian gauge nature of the Standard
Model. The examination of these couplings at ep ...
Watt-level and sub-100-fs self-starting mode-locked 2.4-µm Cr:ZnS oscillator enabled by GaSb-SESAMs
(09/02/2021)
Femtosecond lasers with high peak power at wavelengths above 2 µm are of high interest for generating mid-infrared (mid-IR) broadband coherent light for spectroscopic applications. Cr2+-doped ZnS/ZnSe solid-state lasers ...
High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
(22/11/2021)
We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of ...
Model-independent limits for anomalous triple gauge bosons W + W − γ couplings at the CLIC
(18 June 20)
In this study, we investigate the potential of the γ γ → W + W − , e + γ →
e+ γ ∗ γ → e + W − W + and e+ e− → e+ γ ∗ γ ∗ e− → e + W − W + e − processes at the Com-
pact Linear Collider (CLIC) operating in γ γ , γ ∗ γ and ...
Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications
(20/01/2021)
Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.30As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic ...
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
(01/03/2021)
Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires ...
Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties
(2021)
Un-doped and nitrogen-doped ZnO thin films were grown by using radio frequency (RF) magnetron sputtering
method changing the nitrogen flow rate between 0% ����� 12.5% and the thickness dependence of films was
determined. ...
Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing
(2021)
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target
by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 ◦C at variable RF power ...
Characterization of multilayer Al doping in ZnO
(2021)
ZnO, ZnO/Al, Al/ZnO/Al, and ZnO/Al/ZnO samples were deposited on c-plane sapphire and Si substrates by radio frequency
magnetron sputtering (RFMS) using ZnO target. In order to form doped ZnO:Al thin films, these grown ...
Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates
(2021)
In this study, high-quality p-type NiO semiconductor thin film was investigated using the thermal evaporation method after thermal oxidation of as-deposited 50 nm Ni film at 450◦C for 2.5 h. NiO thin film simultaneously ...