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High average output power from a backside-cooled 2-µm InGaSb VECSEL with full gain characterization
(22/11/2021)
We compare the gain and continuous wave lasing properties of two InGaSb-based vertical external cavity surface emitting lasers (InGaSb VECSEL) with different heat management approaches operating at a center wavelength of ...
Model-independent limits for anomalous triple gauge bosons W + W − γ couplings at the CLIC
(18 June 20)
In this study, we investigate the potential of the γ γ → W + W − , e + γ →
e+ γ ∗ γ → e + W − W + and e+ e− → e+ γ ∗ γ ∗ e− → e + W − W + e − processes at the Com-
pact Linear Collider (CLIC) operating in γ γ , γ ∗ γ and ...
Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications
(20/01/2021)
Effect of high bandgap 0.5 nm AlAs on the electronic and optical properties of the In0.70Ga0.30As/Al0.60In0.40As superlattice is investigated by using effective mass approximation under the electric field. Electronic ...
Full optical SESAM characterization methods in the 1.9 to 3-µm wavelength regime
(01/03/2021)
Semiconductor saturable absorber mirrors (SESAMs) are widely used for modelocking of various ultrafast lasers. The growing interest for SESAM-modelocked lasers in the short-wave infrared and mid-infrared regime requires ...
Investigation of nitrogen doped ZnO thin films: Effects on their structural and optical properties
(2021)
Un-doped and nitrogen-doped ZnO thin films were grown by using radio frequency (RF) magnetron sputtering
method changing the nitrogen flow rate between 0% ����� 12.5% and the thickness dependence of films was
determined. ...
Gallium oxide films deposition by RF magnetron sputtering; a detailed analysis on the effects of deposition pressure and sputtering power and annealing
(2021)
In this study, gallium oxide (Ga2O3) thin films were deposited on sapphire and n-Si substrates using Ga2O3 target
by radio frequency magnetron sputtering (RFMS) at substrate temperature of 300 ◦C at variable RF power ...
Characterization of multilayer Al doping in ZnO
(2021)
ZnO, ZnO/Al, Al/ZnO/Al, and ZnO/Al/ZnO samples were deposited on c-plane sapphire and Si substrates by radio frequency
magnetron sputtering (RFMS) using ZnO target. In order to form doped ZnO:Al thin films, these grown ...
Investigation of optical, electronic, and magnetic properties of p-type NiO thin film on different substrates
(2021)
In this study, high-quality p-type NiO semiconductor thin film was investigated using the thermal evaporation method after thermal oxidation of as-deposited 50 nm Ni film at 450◦C for 2.5 h. NiO thin film simultaneously ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Vcsel Tabanlı Yüksek Güçlü Yarıiletken Lazerler TÜBİTAK-1003
(2021)
Proje Özeti VCSEL’ler (vertical-cavity surface-emitting laser, düşey- kovuklu yüzey-ışımalı lazer) yirmi yılı aşkın bir süredir giderek büyüyen veri iletişimi (datacom) alanının anahtar parçalarından birisidir. Bunun yanında ...