Browsing Nanoteknoloji Mühendisliği Bölümü by Author "Eğitim Bilimleri Enstitüsü"
Now showing items 21-24 of 24
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Optical and nano-mechanical characterization of c-axis oriented AlN film
Padmalochan Panda; Ramaseshan Rajagopalan; S. Tripursundari; İsmail Altuntaş; İlkay Demir (19.05.2022)This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy (MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic ellipsometry. ... -
Systematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
Smiri Badreddine; R.S. Joshya; İlkay Demir; Saidi Faouzi; İsmail Altuntaş; Delphine Lagarde; Cedric Rober; Marie Xavier; Maaref Hassen (10.12.2022)Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution X-ray ... -
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
Gamze Yolcu; İrem Şimşek; Reyhan kekül; İsmail Altuntaş; Sabit Horoz; İlkay Demir (3.06.2022)AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is used as surfactant to improve ... -
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
Marwa Ben Arbia; Smiri Badreddine; İlkay Demir; Faouzi Saidi; İsmail Altuntaş; Fredj Hassen; Hassen Maaref (5.01.2022)The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted for ...