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Optical and nano-mechanical characterization of c-axis oriented AlN film
(2022)
This paper reports the temperature effects on the optical properties of metalorganic vapour-phase epitaxy
(MOCVD) grown c-axis oriented AlN epilayer thin film studied by in-situ high-temperature spectroscopic
ellipsometry. ...
ystematic optical study of high-x InxGa1-xAs/InP structures for infrared photodetector applications
(2022)
Optical and structural properties in high-x InxGa1-xAs (x > 0.65) samples with varying indium concentration
grown on InP (100) substrate are reported. By increasing the indium fraction, it was found by the high-resolution
X-ray ...
Sensitivity of indium molar fraction in InGaN quantum wells for near-UV light-emitting diodes
(2022)
InGaN-based quantum wells (QWs) have higher threading dislocation density (TDD) in InGaN
Light-emitting diode (LED). Despite of higher TDD, variation of Indium (In) molar fraction in the
QW generate localized excitons ...
The influence of TMGa pre-flow time and amount as surfactant on the structural and optical properties of AlN epilayer
(2022)
AIN is used as a template layer for deep UV (DUV) emitter and detector applications, because of
its wide bandgap and high thermal conductivity. In this study, trimethylgallium (TMGa) source is
used as surfactant to improve ...
Growth and characterization of PALE Si-doped AlN on sapphire substrate by MOVPE
(2022)
In this study, we report different SiH4 flow condition effects on crystal, surface, optical, and electrical characteristics of heteroepitaxial Metal-Organic Vapor Phase Epitaxy (MOVPE) grown AlN layers on sapphire substrates. ...
Performance enhancement of AlGaN deep-ultraviolet laser diode using compositional Al-grading of Si-doped layers
(2022)
Achieving high threshold current density and high optical confinement are big challenges in the realization of
high-performance aluminum gallium nitride (AlGaN)-based deep-ultraviolet (DUV) laser diode (LD). In this
work, ...
Close oxygen coupled low-pressure chemical vapor deposition growth of high quality β-Ga2O3 on sapphire
(2022)
We report on the close oxygen coupled low-pressure chemical vapor deposition (COC-LPCVD) hetero-epitaxial growth of atomically smooth (− 201) oriented β−
Ga2O3 on c-plane sapphire. Utilizing a dedicated line within the ...
In-situ and ex-situ face-to-face annealing of epitaxial AlN
(2022)
AlN films have been deposited on c-plane sapphire substrates by metalorganic-vapor-phase-epitaxy (MOVPE).
The changes in the film structure have been investigated by applying different annealing processes which are exsitu ...
In-situ thermal cleaning of the sapphire substrate and temperature effect on epitaxial AlN.
(2022)
The impact of thermal surface cleaning on epitaxial AlN thin films grown on sapphire is investigated in this study
at various temperatures. The sapphire substrate is cleaned in a hydrogen environment. Structural, optical, ...
Theoretical analyses of the carrier localization effect on the photoluminescence of In-rich InGaAs layer grown on InP
(2022)
The free buffer InGaAs/InP structure has been elaborated by Metal Organic Vapor Phase Epitaxy (MOVPE). High
indium content is chosen to reduce the bandgap energy of the ternary material with direct bandgap to be promoted ...