Search
Now showing items 1-10 of 13
Arsine Flow Rate Effect on the Low Growth Rate Epitaxial InGaAs Layers
(07.06.2021)
Effect of arsine (AsH3) flow rate on epitaxially grown unintentionally doped and low-growth rate
InGaAs layer by using metal organic vapor phase epitaxy at growth temperature 640°C are investigated. While
all other sources ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.11.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
In the present study, the PALE-AlN (pulsed atomic layer epitaxy) epilayers were grown on the Si (111) substrates
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) ...
Nucleation layer temperature effect on AlN epitaxial layers grown by metalorganic vapour phase epitaxy
(20.09.2021)
AlN samples have been grown on sapphire substrate using nucleation layers
(NLs) having different growth temperatures. The growth temperature of the NL
has been varied over a wide range of temperatures highlight the effects ...
ZnO/Al2O3 layered structures deposited by RF magnetron sputtering on glass: growth characteristics, optical properties, and microstructural analysis
(12.08.2021)
In this study, Al2O3 thin films of different thicknesses (50 nm, 100 nm, 150 nm, 200 nm, and 250 nm) were, first, grown using RF
magnetron sputtering technique on glass substrate at 30 °C temperature, with 120Wpower value. ...
Yüksek Güç-Frekans Uygulamaları Için MOCVD ile Epitaksiyel AlN Kristalinin Büyütülmesi, Katkılanması, Karakterizasyonu ve Aygıt Üretimi
(15.03.2021)
Bu projede yüksek güç-frekans uygulamaları için MOCVD (metal organik kimyasal buhar depolama) ile epitaksiyel AlN kristalinin büyütülmesi, katkılanması, karakterizasyonu ve aygıt üretimi yapılarak diyot karakteristiklerinin ...
Influence of the PALE growth temperature on quality of MOVPE grown AlN/Si (111)
(02.02.2021)
at different growth temperatures by metal organic vapor phase epitaxy (MOVPE) technique. The oxygen (O) and
silicon (Si) concentrations of grown PALE-AlN epilayers and interface between epilayer and substrate were ...
Investigating the optical, electronic, magnetic properties and DFT of NiO films prepared using RF sputtering with various argon pressures
(28.04.2023)
In this study, we investigated the structural, optical, magnetic, and conductive properties of nickel oxide (NiO)
films on glass substrates deposited using Radio Frequency (RF) magnetron sputtering with varying Ar ...
Experimental insights toward carrier localization in in-rich InGaAs/InP as candidate for SWIR detection: Microstructural analysis combined with optical investigation
(15.01.2023)
Hyperspectral imaging has been flourished thanks to the huge investigation of the infrared spectrum from NIR to
LWIR bands. The ternary InGaAs has been investigated herein in the context of studying the structural ...
Effect of substrate temperature on Raman study and optical properties of GeOx/ Si thin films
(14.10.2023)
In this study, GeOx
thin films were deposited onto Si substrates using the RF magnetron sputtering method. We looked at
how the temperature of the substrate affected the Raman spectra and optical characteristics of ...